| PART |
Description |
Maker |
| UC62LV1008-55 |
LOW POWER CMOS SRAM 128K X 8BITS
|
ETC[ETC]
|
| TC58256FT |
256-MBIT (32M x 8BITS) CMOS NAND EEPROM
|
TOSHIBA[Toshiba Semiconductor]
|
| TC58V64ADC |
64-MBIT (8M X 8BITS) CMOS NAND E PROM (8M BYTE SmartMedia)
|
TOSHIBA[Toshiba Semiconductor]
|
| MB4072 |
8Bits High-Speed Digital to Analog Converter(8位高速并行接口电流输出DAC)
|
Fujitsu Limited
|
| TC58256DC TC58256FT |
256M Bit (32M×8Bits ) CMOS NAND EEPROM(32M×8位与非EEPROM) 256M比特2M的8位）的CMOS闪存EEPROM的（32M的8位与非的EEPROM
|
Toshiba Corporation
Toshiba, Corp.
|
| M464S1724CT1-L1L_C1L M464S1724CT1-L1H_C1H M464S172 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data sheet
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存4Banks4K的刷新，3.3V的同步DRAM的社民党
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新，3.3V的同步DRAM的社民党
16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| D2364 UPD2364 UPD2364-30PC UPD2364-35PC UPD2364-45 |
Search -> UPD2364
ROM 8192 words / 8-Bit
READ ONLY MEMORY 8192 WORDS, 8BITS/WORD
|
NEC Electronics
NEC Corp.
|
| W9864G6IH |
1M X 4BANKS X 16BITS SDRAM
|
Winbond
|
| HY5V52LF |
4Banks x 2M x 32bits Synchronous DRAM
|
Hynix Semiconductor
|
| T4312816B T4312816B-6SG T4312816B-7S T4312816B-7SG |
8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM
|
Taiwan Memory Technology
|
| HY5W6B6DLF-HE HY5W6B6DLF-PE HY5W6B6DLFP-HE HY5W6B6 |
4Banks x1M x 16bits Synchronous DRAM
|
Hynix Semiconductor
|
| IS45VM32160E-6BLA1 IS45VM32160E-6BLA2 |
4M x 32Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
